Q.1

The location of a unit of data in a memory array is called its ________.

  • storage
  • RAM
  • address
  • data
Q.2

On a CD-ROM, ________ are recessed areas representing a 0.

  • mounds
  • lands
  • holes
  • pits
Q.3

In general, the ________ have the smallest bit size and the ________ have the largest.

  • EEPROMs, Flash
  • SRAM, mask ROM
  • mask ROM, SRAM
  • DRAM, PROM
Q.4

What is the principal advantage of using address multiplexing with DRAM memory?

  • reduced memory access time
  • reduced requirement for constant refreshing of the memory contents
  • reduced pin count and decrease in package size
  • It eliminates the requirement for a chip-select input line, thereby reducing the pin count.
Q.5

What is the major difference between SRAM and DRAM?

  • DRAMs must be periodically refreshed.
  • SRAMs can hold data via a static charge, even with power off.
  • The only difference is the terminal from which the data is removed—from the FET Drain or Source.
  • Dynamic RAMs are always active; static RAMs must reset between data read/write cycles.
Q.6

The ideal memory ________.

  • has high storage capacity
  • is nonvolatile
  • has in-system read and write capacity
  • has all of the above characteristics
Q.7

When a RAM module passes the checkerboard test it is:

  • able to read and write only 1s.
  • faulty.
  • probably good.
  • able to read and write only 0s.
Q.8

Why is a refresh cycle necessary for a dynamic RAM?

  • to clear the flip-flops
  • to set the flip-flops
  • The refresh cycle discharges the capacitor cells.
  • The refresh cycle keeps the charge on the capacitor cells.
Q.9

What is the principal advantage of using address multiplexing with DRAM memory?

  • reduced memory access time
  • reduced requirement for constant refreshing of the memory contents
  • reduced pin count and decrease in package size
  • It eliminates the requirement for a chip-select input line, thereby reducing the pin count.
Q.10

Advantage(s) of an EEPROM over an EPROM is/are:

  • the EPROM can be erased with ultraviolet light in much less time than an EEPROM
  • the EEPROM can be erased and reprogrammed without removal from the circuit
  • the EEPROM has the ability to erase and reprogram individual words
  • the EEPROM can be erased and reprogrammed without removal from the circuit, and can erase and reprogram individual words
Q.11

What is the maximum time required before a dynamic RAM must be refreshed?

  • 2 ms
  • 4 ms
  • 8 ms
  • 10 ms
Q.12

What is a multitap digital delay line?

  • a series of inverter gates with RC circuits between each one
  • a series of inverter gates with RL circuits between each one
  • a series of NAND gates with RC circuits between each one
  • a series of NAND gates with RL circuits between each one
Q.13

The bit capacity of a memory that has 2048 addresses and can store 8 bits at each address is ________.

  • 4096
  • 8129
  • 16358
  • 32768
Q.14

The periodic recharging of DRAM memory cells is called ________.

  • multiplexing
  • bootstrapping
  • refreshing
  • flashing
Q.15

Which of the following best describes volatile memory?

  • memory that retains stored information when electrical power is removed
  • memory that loses stored information when electrical power is removed
  • magnetic memory
  • nonmagnetic
Q.16

To which pin on the RAM chip does the address decoder connect in order to signal which memory chip is being accessed?

  • The address input
  • The output enable
  • The chip enable
  • The data input
Q.17

Which type of ROM has to be custom built by the factory?

  • ROM
  • mask ROM
  • EPROM
  • EEPROM
Q.18

What is the computer main memory?

  • Hard drive and RAM
  • CD-ROM and hard drive
  • RAM and ROM
  • CMOS and hard drive
Q.19

Which is not a magnetic storage device?

  • Magnetic disk
  • Magnetic tape
  • Magneto-optical disk
  • Optical disk
Q.20

The mask ROM is ________.

  • permanently programmed during the manufacturing process
  • volatile
  • easy to reprogram
  • extremely expensive
Q.21

Which of the following best describes random-access memory (RAM)?

  • a type of memory in which access time depends on memory location
  • a type of memory that can be written to only once but can be read from an infinite number of times
  • a type of memory in which access time is the same for each memory location
  • mass memory
Q.22

How many 8 k × 1 RAMs are required to achieve a memory with a word capacity of 8 k and a word length of eight bits?

  • Eight
  • Four
  • Two
  • One
Q.23

Which of the following is normally used to initialize a computer system's hardware?

  • Bootstrap memory
  • Volatile memory
  • External mass memory
  • Static memory
Q.24

What is a major disadvantage of RAM?

  • Its access speed is too slow.
  • Its matrix size is too big.
  • It is volatile.
  • High power consumption
Q.25

EEPROM stands for ________.

  • encapsulated electrical programmable read-only memory
  • elementary electrical programmable read-only memory
  • electrically erasable programmable read-only memory
  • elementary erasable programmable read-only memory
Q.26

A major disadvantage of the mask ROM is that it:

  • is time consuming to change the stored data when system requirements change
  • is very expensive to change the stored data when system requirements change
  • cannot be reprogrammed if stored data needs to be changed
  • has an extremely short life expectancy and requires frequent replacement
Q.27

The time from the beginning of a read cycle to the end of tACS or tAA is referred to as:

  • access time
  • data hold
  • read cycle time
  • write enable time
Q.28

How many 1K × 4 RAM chips would be required to build a 1K × 8 memory system?

  • 2
  • 4
  • 8
  • 16
Q.29

Why are ROMs called nonvolatile memory?

  • They lose memory when power is removed.
  • They do not lose memory when power is removed.
Q.30

The mask ROM is ________.

  • MOS technology
  • diode technology
  • resistor-diode technology
  • DROM technology
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