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Quiz 1
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Q.1
In the sale of diamonds the unit of weight is carat. One carat is equal to
100 mg
150 mg
200 mg
500 mg
Q.2
Fermi level is the amount of energy in which
A hole can have at room temperature
An electron can have at room temperature
Must be given to an electron move to conduction band
None of the above
Q.3
In monolithic ICs, all the components are fabricated by
Diffusion process
Oxidation
Evaporation
None
Q.4
Forbidden energy gap in germanium at 0 K is about
10 eV
5 eV
2 eV
0.78 eV
Q.5
Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Q.6
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
should not exceed half the breakdown voltage
should not exceed the breakdown voltage
should not exceed one third the breakdown voltage
may be equal to or less than breakdown voltage
Q.7
The most commonly used semiconductor material is
Silicon
Germanium
Mixture of silicon and germanium
None of the above
Q.8
Permalloy is
A variety of stainless steel
A polymer
A conon-ferrous alloy used in aircraft industry
A nickel an iron alloy having high permeability
Q.9
In a semiconductor diode, the barrier offers opposition to
Holes in P-region only
Free electrons in N-region only
Majority carriers in both regions
Majority as well as minority carriers in both regions
Q.10
As compared to bipolar junction transistor, a FET
Is less noisy
Has better thermal stability
Has higher input resistance
All of the above
Q.11
Which one of the following is not a characteristic of a ferroelectric material?
High dielectric constant
No hysteresis
Ferroelectric characteristic only above the curie point
Electric dipole moment
Q.12
In which of these is reverse recovery time nearly zero?
Zener diode
Tunnel diode
Schottky diode
PIN diode
Q.13
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
100
99
1.01
0.99
Q.14
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Q.15
The depletion layer width of Junction
Decreases with light doping
Is independent of applied voltage
Is increased under reverse bias
Increases with heavy doping
Q.16
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
The number of free electrons increases
The number of free electrons increases but the number of holes decreases
The number of free electrons and holes increase by the same amount
The number of free electrons and holes increase but not by the same amount
Q.17
The amount of photoelectric emission current depends on
Frequency of incident radiation
Intensity of incident radiation
Both frequency and intensity of incident radiation
None of the above
Q.18
The sensitivity of human eyes is maximum at
White portion of spectrum
Green portion of spectrum
Red portion of spectrum
Violet portion of spectrum
Q.19
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
Normal to both current and magnetic field
In the direction of current
Antiparallel to magnetic field
In arbitrary direction
Q.20
In a half wave rectifier, the load current flows
Only for the positive half cycle of the input signal
Only for the negative half cycle of the input signal
For full cycle
For less than fourth cycle
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