Q.1
In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.
Q.2
The dynamic resistance of a forward biased p-n diode
Q.3
Each cell of a static Random Access memory contains
Q.4
Power diodes are generally
  • Silicon diodes
  • Germanium diodes
  • Either of the above
  • None of the above
Q.5
Which variety of copper has the best conductivity?
  • Pure annealed copper
  • Hard drawn copper
  • Induction hardened copper
  • Copper containing traces of silicon
Q.6
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
  • True
  • False
Q.7
What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliverW of d.c. power to the load?
  • 1232 W
  • 848 W
  • 616 W
  • 308 W
Q.8
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
  • should not exceed half the breakdown voltage
  • should not exceed the breakdown voltage
  • should not exceed one third the breakdown voltage
  • may be equal to or less than breakdown voltage
Q.9
Fermi level is the amount of energy in which
  • A hole can have at room temperature
  • An electron can have at room temperature
  • Must be given to an electron move to conduction band
  • None of the above
Q.10
In monolithic ICs, all the components are fabricated by
  • Diffusion process
  • Oxidation
  • Evaporation
  • None
Q.11
In which of these is reverse recovery time nearly zero?
  • Zener diode
  • Tunnel diode
  • Schottky diode
  • PIN diode
Q.12
Which one of the following is not a characteristic of a ferroelectric material?
  • High dielectric constant
  • No hysteresis
  • Ferroelectric characteristic only above the curie point
  • Electric dipole moment
Q.13
Permalloy is
  • A variety of stainless steel
  • A polymer
  • A conon-ferrous alloy used in aircraft industry
  • A nickel an iron alloy having high permeability
Q.14
The most commonly used semiconductor material is
  • Silicon
  • Germanium
  • Mixture of silicon and germanium
  • None of the above
Q.15
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
  • Normal to both current and magnetic field
  • In the direction of current
  • Antiparallel to magnetic field
  • In arbitrary direction
Q.16
Forbidden energy gap in germanium at 0 K is about
  • 10 eV
  • 5 eV
  • 2 eV
  • 0.78 eV
Q.17
In the sale of diamonds the unit of weight is carat. One carat is equal to
  • 100 mg
  • 150 mg
  • 200 mg
  • 500 mg
Q.18
Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.
  • Both A and R are true and R is correct explanation of A
  • Both A and R are true but R is not a correct explanation of A
  • A is true but R is false
  • A is false but R is true
Q.19
In a semiconductor diode, the barrier offers opposition to
  • Holes in P-region only
  • Free electrons in N-region only
  • Majority carriers in both regions
  • Majority as well as minority carriers in both regions
Q.20
As compared to bipolar junction transistor, a FET
  • Is less noisy
  • Has better thermal stability
  • Has higher input resistance
  • All of the above
0 h : 0 m : 1 s