Q.1
Silicon is not suitable for fabrication of light emitting diodes because it is
  • An indirect band gap semiconductor
  • Direct band gap semiconductor
  • Wideband gap semiconductor
  • Narrowband gap semiconductor
Q.2
Each cell of a static Random Access memory contains
  • 6 MOS transistor
  • 4 MOS transistor, 2 capacitor
  • 2 MOS transistor, 4 capacitor
  • 1 MOS transistor and 1 capacitor
Q.3
The dynamic resistance of a forward biased p-n diode
  • Varies inversely with current
  • Varies directly with current
  • Is constant
  • Is either constant or varies directly with current
Q.4
In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.
  • Reverse, voltage
  • Forward, current
  • Forward, voltage
  • Reverse, current
Q.5
A thermistor is a
  • Thermocouple
  • Thermometer
  • Miniature resistance
  • Heat sensitive explosive
Q.6
For a NPN bipolar transistor, what is the main stream of current in the base region?
  • Drift of holes
  • Diffusion of holes
  • Drift of electrons
  • Diffusion of electrons
Q.7
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.
  • Both A and R are true and R is correct explanation of A
  • Both A and R are true but R is not a correct explanation of A
  • A is true but R is false
  • A is false but R is true
Q.8
For a P-N diode, the number of minority carriers crossing the junction depends on
  • Forward bias voltage
  • Potential barrier
  • Rate of thermal generation of electron hole pairs
  • None of the above
Q.9
An electron in the conduction band
  • Has higher energy than the electron in the valence band
  • Has lower energy than the electron in the valence band
  • Loses its charge easily
  • Jumps to the top of the crystal
Q.10
The forbidden energy gap between the valence band and conduction band will be least in case of
  • Metals
  • Semiconductors
  • Insulators
  • All of the above
0 h : 0 m : 1 s