Q.1
A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is ___________
Q.2
The transconductance of a JFET ranges from ___________
Q.3
In a p-channel JFET, the charge carriers are ___________
Q.4
The pinch-off voltage of a JFET is about ___________
Q.5
For VGS = 0 V, the drain current becomes constant when VDS exceeds
Q.6
When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage
Q.7
The channel of a JFET is between the ___________
Q.8
A MOSFET has ___________ terminals
Q.9
The input control parameter of a JFET is ___________
Q.10
The input impedance of a JFET is ___________ that of an ordinary transistor
Q.11
The gate of a JFET is ___________ biased
Q.12
A n-channel D-MOSFET with a positive VGS is operating in ___________
Q.13
A MOSFET uses the electric field of a ___________ to control the channel current
Q.14
A JFET has three terminals, namely ___________
Q.15
The source terminal of a JEFT corresponds to ___________ of a vacuum tube
Q.16
If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________
Q.17
If the gate of a JFET is made less negative, the width of the conducting channel ___________
Q.18
If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________
Q.19
In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________
Q.20
In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________
0 h : 0 m : 1 s