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Electrical Engineering
FET(Field Effect Transistors)
Quiz 2
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Q.1
A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is ___________
20 mA
0 mA
40 mA
10 mA
Q.2
The transconductance of a JFET ranges from ___________
100 to 500 mA/V
500 to 1000 mA/V
0.5 to 30 mA/V
above 1000 mA/V
Q.3
In a p-channel JFET, the charge carriers are ___________
electrons
holes
both electrons and holes
none of the above
Q.4
The pinch-off voltage of a JFET is about ___________
5 V
0.6 V
15 V
25 V
Q.5
For VGS = 0 V, the drain current becomes constant when VDS exceeds
cut off
VDD
VP
o V
Q.6
When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage
decreases
increases
remains constant
none of the above
Q.7
The channel of a JFET is between the ___________
gate and drain
drain and source
gate and source
input and output
Q.8
A MOSFET has ___________ terminals
two
five
four
three
Q.9
The input control parameter of a JFET is ___________
gate voltage
source voltage
drain voltage
gate current
Q.10
The input impedance of a JFET is ___________ that of an ordinary transistor
equal to
less than
more than
none of the above
Q.11
The gate of a JFET is ___________ biased
reverse
forward
reverse as well as forward
none of the above
Q.12
A n-channel D-MOSFET with a positive VGS is operating in ___________
the depletion-mode
the enhancement-mode
cut off
saturation
Q.13
A MOSFET uses the electric field of a ___________ to control the channel current
capacitor
battery
generator
none of the above
Q.14
A JFET has three terminals, namely ___________
cathode, anode, grid
emitter, base, collector
source, gate, drain
none of the above
Q.15
The source terminal of a JEFT corresponds to ___________ of a vacuum tube
plate
cathode
grid
none of the above
Q.16
If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________
is decreased
is increased
remains the same
none of the above
Q.17
If the gate of a JFET is made less negative, the width of the conducting channel ___________
remains the same
is decreased
is increased
none of the above
Q.18
If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________
is increased
is decreased
remains the same
none of the above
Q.19
In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________
1
11.4
8.75
3.2
Q.20
In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________
450
45
2.52
4.5
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