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Electrical Engineering
Transistors
Quiz 3
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Q.1
A tuned amplifier is used in ___________ applications
Radio frequency
Low frequency
Audio frequency
None of the above
Q.2
The dimensions of L/CR are that of ___________
Farad
Henry
Ohm
None of the above
Q.3
IC = [a / (1 - a )] IB + [ / (1 - a )]
ICBO
ICEO
IC
IE
Q.4
The relation between ß and a is ___________
ß = 1 / (1 – a )
ß = (1 – a ) / a
ß = a / (1 – a )
ß = a / (1 + a )
Q.5
A resonant circuit contains ___________ elements
R and L only
R and C only
Only R
L and C
Q.6
IC = [a / (1 - a )] IB + ___________
ICEO
ICBO
IC
(1 - a ) IB
Q.7
In a transistor, signal is transferred from a ___________ circuit
high resistance to low resistance
low resistance to high resistance
high resistance to high resistance
low resistance to low resistance
Q.8
BC 147 transistor indicates that it is made of ___________
germanium
silicon
carbon
none of the above
Q.9
Double tuned circuits are used in ___________ stages of a radio receiver
IF
Audio
Output
None of the above
Q.10
In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is ___________
100
50
about 1
200
Q.11
If L/C ratio of a parallel LC circuit is increased, the Q of the circuit ___________
Is decreased
Is increased
Remains the same
None of the above
Q.12
If the resistance of a tuned circuit is increased, the Q of the circuit ___________
Is increased
Is decreased
Remains the same
None of the above
Q.13
Most of the majority carriers from the emitter ___________
recombine in the base
recombine in the emitter
pass through the base region to the collector
none of the above
Q.14
The most commonly used transistor arrangement is ___________ arrangement
common emitter
common base
common collector
none of the above
Q.15
In a transistor, the base current is about ___________ of emitter current
25%
20%
35%
5%
Q.16
IC = aIE + ___________
IB
ICEO
ICBO
ßIB
Q.17
In a transistor amplifier circuit VCE = VCB + ___________
VBE
2 VBE
5 VBE
None of the above
Q.18
The stability factor of a collector feedback bias circuit is ___________ that of base resistor bias.
The same as
More than
Less than
None of the above
Q.19
If biasing is not done in an amplifier circuit, it results in ___________
Decrease in the base current
Unfaithful amplification
Excessive collector bias
None of the above
Q.20
The disadvantage of voltage divider bias is that it has ___________
High stability factor
Low base current
Many resistors
None of the above
Q.21
For frequencies below the resonant frequency , a parallel LC circuit behaves as a ___________ load
Inductive
Resistive
Capacitive
None of the above
Q.22
A tuned amplifier uses ___________ load
Resistive
Capacitive
LC tank
Inductive
Q.23
As the temperature of a transistor goes up, the base emitter resistance ___________
decreases
increases
remains the same
none of the above
Q.24
At parallel resonance, the ratio L/C is ___________
Very large
Zero
Small
None of the above
Q.25
The Q of a tuned circuit refers to the property of ___________
Sensitivity
Fidelity
Selectivity
None of the above
Q.26
In the design of a biasing circuit, the value of collector load RC is determined by ___________
VCE consideration
VBE consideration
IB consideration
None of the above
Q.27
The operating point ___________ on the a.c. load line
Also line
Does not lie
May or may not lie
Data insufficient
Q.28
The voltage gain of a tuned amplifier is ___________ at resonant frequency
Minimum
Maximum
Half-way between maximum and minimum
Zero
Q.29
In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage?
7 V
3 V
5 V
8 V
Q.30
A transistor has ___________
one pn junction
two pn junctions
three pn junctions
four pn junctions
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