Q.1
In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?
Q.2
The most commonly used semiconductor in the manufacture of a transistor is ___________
Q.3
The number of depletion layers in a transistor is ___________
Q.4
An ideal value of stability factor is ___________
  • 100
  • 200
  • More than 200
  • 1
Q.5
The leakage current in CE arrangement is ___________ that in CB arrangement
  • more than
  • less than
  • the same as
  • none of the above
Q.6
Most of the majority carriers from the emitter ___________
  • recombine in the base
  • recombine in the emitter
  • pass through the base region to the collector
  • none of the above
Q.7
In a tansistor, IC =mA and IE = 100.2 mA. The value of ß is ___________
  • 100
  • 50
  • about 1
  • 200
Q.8
If the value of collector current IC increases, then the value of VCE ___________
  • Remains the same
  • Decreases
  • Increases
  • None of the above
Q.9
A tuned amplifier is used in ___________ applications
  • Radio frequency
  • Low frequency
  • Audio frequency
  • None of the above
Q.10
If Q of an LC circuit increases, then bandwidth ___________
  • Increases
  • Decreases
  • Remains the same
  • Insufficient data
Q.11
The power gain in a transistor connected in ___________ arrangement is the highest
  • common emitter
  • common base
  • common collector
  • none of the above
Q.12
At series or parallel resonance, the circuit power factor is ___________
  • 0%
  • 5%
  • 10%
  • 8%
Q.13
The base of a transistor is ___________ doped
  • heavily
  • moderately
  • lightly
  • none of the above
Q.14
In a pnp transistor, the current carriers are ___________
  • acceptor ions
  • donor ions
  • free electrons
  • holes
Q.15
ICEO = () ICBO
  • ß
  • 1 + a
  • 1 + ß
  • none of the above
Q.16
In a npn transistor, ___________ are the minority carriers
  • free electrons
  • holes
  • donor ions
  • acceptor ions
Q.17
A silicon transistor is biased with base resistor method. If ß=VBE =0.7 V, zero signal collector current IC = 1 mA and VCC =, what is the value of the base resistor RB?
  • 105 kΩ
  • 530 kΩ
  • 315 kΩ
  • None of the above
Q.18
The biasing circuit has a stability factor ofIf due to temperature change, ICBO changes by 1 µA, then IC will change by ___________
  • 100 µA
  • 25 µA
  • 20 µA
  • 50 µA
Q.19
Tuned class C amplifiers are used for RF signals of ___________
  • Low power
  • High power
  • Very high power
  • None of the above
Q.20
The Q of an LC circuit is given by ___________
  • 2pfr x R
  • R / 2pfrL
  • 2pfrL / R
  • R2/2pfrL
Q.21
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
  • One hundredth
  • One tenth
  • One thousandth
  • One millionth
Q.22
For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line
  • The end point
  • Middle
  • The maximum current point
  • None of the above
Q.23
In a transistor if ß =and collector current ismA, then IE is ___________
  • 100 mA
  • 10.1 mA
  • 110 mA
  • none of the above
Q.24
The Q of a tuned amplifier is generally ___________
  • Less than 5
  • Less than 10
  • More than 10
  • None of the above
Q.25
The value of ß for a transistor is generally ___________
  • 1
  • less than 1
  • between 20 and 500
  • above 500
Q.26
If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________
  • 6 mA
  • 2 mA
  • 3 mA
  • 1 mA
Q.27
The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________
  • Limit the maximum emitter current
  • Provide base-emitter bias
  • Limit the change in emitter current
  • None of the above
Q.28
The voltage gain in a transistor connected in ___________ arrangement is the highest
  • common base
  • common collector
  • common emitter
  • none of the above
Q.29
The output impedance of a transistor connected in ___________ arrangement is the highest
  • common emitter
  • common collector
  • common base
  • none of the above
Q.30
The input impedance of a transistor connected in ___________ arrangement is the highest
  • common emitter
  • common collector
  • common base
  • none of the above
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