Q.1
The transistor in the circuit shown below has kn = 0.4 mA/VVt = 0.5 V and λ =Operation at the edge of saturation is obtained when
Questionelectronic-devices-circuits-questions-answers1.jpg
  • a) (W/L)RD = 0.5 kΩ
  • b) (W/L)RD = 1.0 kΩ
  • c) (W/L)RD = 1.5 kΩ
  • d) (W/L)RD = 2.0 kΩ
Q.2
The PMOS transistor in the circuit shown has Vt = −0.7 V, μpCox =μA/VL = 0.8 μm, and λ =Find the value of R in order to establish a drain current of 0.mA and a voltage VD of 3.5 V.
Questionelectronic-devices-circuits-questions-answers2.jpg
  • a) 12.5 KΩ
  • b) 25 kΩ
  • c) 37.5 kΩ
  • d) 50 kΩ
Q.3
For each of the circuits shown find the labeled voltages. For all transistors, kn(W/L) = 1 mA/VVt = 2V, and λ =Find V3
  • a) 2.41V
  • b) 3.41V
  • c) 4.41V
  • d) 1.41V
Q.4
For each of the circuits shown find the labeled voltages. For all transistors, kn(W/L) = 1 mA/VVt = 2V, and λ =Find V4 and V5
Questionelectronic-devices-circuits-questions-answers6.jpg
  • a) 4V and -5V respectively
  • b) -4V and 5V respectively
  • c) 4V and 5V respectively
  • d) -4V and -5V respectively
Q.5
For each of the circuits shown find the labeled voltages. For all transistors, kn(W/L) = 1 mA/VVt = 2V, and λ =Find V1 and V2
Questionelectronic-devices-circuits-questions-answers7.jpg
  • a) 2V and -4V
  • b) -2V and 4V
  • c) 2V and 4V
  • d) -2V and -4V
Q.6
For each of the circuits shown find the labeled node voltages. The NMOS transistors have Vt = 1 V and kn( W/L ) = 2 mA/V2 and λ =Find V1 and V2
Questionelectronic-devices-circuits-questions-answers8.jpg
  • a) 2.44 and -1.28 V
  • b) 2.44 and -2.56 V
  • c) 1.22 and -2.56 V
  • d) 1.22 and -1.28 V
Q.7
For each of the circuits shown find the labeled node voltages. The NMOS transistors have Vt = 1 V and kn( W/L ) = 2 mA/V2 and λ =Find V3 and V4
  • a) 3.775V and 5V
  • b) 3.775V and 2.55V
  • c) 7.55V and 2.55V
  • d) 7.555V and 5V
Q.8
The NMOS transistors in the circuit shown have Vt = 1 V, μnCOX =μA/Vλ =and L1 = L2 = L3 = 1μm. Then which of the following is not the value of the width of these MOSFETs shown
  • a) 2 µm
  • b) 8µm
  • c) All of the mentioned
  • d) None of the mentioned
Q.9
The MOSFET shown has Vt = 1V, kn = 100µA/V2 and λ =Find the required values of W/L and of R so that when vI = VDD = +5 V, rDS =Ω, and VO =mV.
  • a) W/L = 25 and R = 4.95 kΩ
  • b) W/L = 25 and R = 9.90 kΩ
  • c) W/L = 50 and R = 4.95 kΩ
  • d) W/L = 50 and R = 9.90 kΩ
Q.10
For the PMOS transistor in the circuit shown kn= 8 µA/VW/L = 25,|Vtp| =and I = 100μA. For what value of R is VSD = VSG?
Questionelectronic-devices-circuits-questions-answers10.jpg
  • a) 0 Ω
  • b) 12.45 kΩ
  • c) 25.9 kΩ
  • d) 38.35 kΩ
0 h : 0 m : 1 s