Breakdown voltage and pinch-off voltage of a JFET are different terms for the same voltage level.
In a voltage-divider JFET circuit, ID is a maximum when VGS = 0 V.
Transconductance is also called mutual conductance.
A JFET is very similar to a BJT.
The amount of gate voltage needed to turn the JFET completely off is called VGS(OFF).
A JFET can be either a current-controlled device or a voltage-controlled device.
A MOSFET has an isolated gate.
The gate-biased JFET characteristic curve includes IDS.
A common-drain configured JFET is also called a source-follower.
If the drain, source, and channel are all a p-type material, and the transistor operates in both modes, this is a p-channel E-MOSFET.
A JFET has 3 terminals: gate, drain, and source.
An enhancement-type MOSFET or E-MOSFET can be turned on when the channel is depleted.
A D-MOSFET cannot be biased using zero biasing.
The charge carriers in a junction field effect transistor (JFET) will flow from source to drain in a p-channel and from drain to source in an n-channel.
JFET terminal "legs" are connections to the drain, the gate, and the:
When the JFET is no longer able to control the current, this point is called the:
The transconductance curve of a JFET is a graph of:
Which component is considered to be an "OFF" device?
A very simple bias for a D-MOSFET is called:
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