Q.1

The binary data stored in an EEPROM is___________.

  • volatile
  • permanent
  • refreshed
  • erasable
Q.2

The data stored in a Mask ROM (MROM) is ___________.

  • permanent
  • volatile
  • erasable
  • temporary
Q.3

In general, _________ are used when a small amount of read/write is required.

  • EEPROMs
  • PROMs
  • SRAMs
  • DRAMs
Q.4

A nonvolatile type of memory that can be programmed and erased in sectors, rather than one byte at a time is:

  • flash memory
  • EPROM
  • EEPROM
  • MPROM
Q.5

Select the best description of read-only memory (ROM).

  • nonvolatile, used to store information that changes during system operation
  • nonvolatile, used to store information that does not change during system operation
  • volatile, used to store information that changes during system operation
  • volatile, used to store information that does not change during system operation
Q.6

A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________.

  • flash conversion
  • dynamic refresh
  • address multiplexing
  • address strobe
Q.7

The process of entering data into the ROM is called ___________.

  • burning in
  • configuration
  • internal decoding
  • addressing
Q.8

To reduce the number of pins on the IC package, manufacturers often use ___________.

  • MOSFET architecture
  • address multiplexing
  • address decoding
  • address demultiplexing
Q.9

Which of the following best describes static memory devices?

  • memory devices that are magnetic in nature and do not require constant refreshing
  • semiconductor memory devices in which stored data is retained as long as power is applied
  • memory devices that are magnetic in nature and require constant refreshing
  • semiconductor memory devices in which stored data will not be retained with the power applied unless constantly refreshed
Q.10

What is the principal advantage of using address multiplexing with DRAM memory?

  • reduced memory access time
  • reduced requirement for constant refreshing of the memory contents
  • reduced pin count and decrease in package size
  • no requirement for a chip-select input line, thereby reducing the pin count
Q.11

A computerized self-diagnostic for a ROM test uses:

  • the check-sum method
  • a ROM listing
  • ROM comparisons
  • a checkerboard test
Q.12

Advantage(s) of an EEPROM over an EPROM is (are):

  • the EPROM can be erased with ultraviolet light in much less time than an EEPROM
  • the EEPROM can be erased and reprogrammed without removal from the circuit
  • the EEPROM has the ability to erase and reprogram individual words
  • the EEPROM can erase and reprogram individual words without removal from the circuit
Q.13

Which of the following RAM timing parameters determine(s) its operating speed?

  • tacc
  • taa and tacs
  • t1 and t3
  • trc and twc
Q.14

The time interval between the memory receiving a new address input and the data being available is called _________.

  • access time
  • bus speed
  • read/write speed
  • write/data speed
Q.15

The periodic recharging of DRAM memory cells is called ___________.

  • multiplexing
  • bootstrapping
  • refreshing
  • flashing
Q.16

How many storage locations are available when a memory device has twelve address lines?

  • 144
  • 512
  • 2048
  • 4096
Q.17

Memory that loses its contents when power is lost is:

  • nonvolatile
  • volatile
  • random
  • static
Q.18

________ is an example of read/write memory.

  • PROM
  • EEPROM
  • RAM
  • MROM
Q.19

The time interval between the memory receiving a new address input and the data being available is called _________.

  • access time
  • bus speed
  • read/write speed
  • write/data speed
Q.20

Which of the following memories uses a MOSFET and a capacitor as its memory cell?

  • SRAM
  • DRAM
  • ROM
  • DROM
0 h : 0 m : 1 s