Q.1

Which of the following cannot actually move?

  • majority carriers
  • ions
  • holes
  • free electrons
Q.2

How many valence electrons are in every semiconductor material?

  • 1
  • 2
  • 3
  • 4
Q.3

When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

  • 1949, William Schockley
  • 1955, Walter Bratten
  • 1959, Robert Noyce
  • 1960, John Bardeen
Q.4

Silicon atoms combine into an orderly pattern called a:

  • covalent bond
  • crystal
  • semiconductor
  • valence orbit
Q.5

In "p" type material, minority carriers would be:

  • holes
  • dopants
  • slower
  • electrons
Q.6

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

  • 1
  • 2
  • 4
  • 6
Q.7

What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

  • conductivity
  • resistance
  • power
  • all of the above
Q.8

What is a type of doping material?

  • extrinsic semiconductor material
  • pentavalent material
  • n-type semiconductor
  • majority carriers
Q.9

When is a P-N junction formed?

  • in a depletion region
  • in a large reverse biased region
  • the point at which two opposite doped materials come together
  • whenever there is a forward voltage drop
Q.10

In "n" type material, majority carriers would be:

  • holes
  • dopants
  • slower
  • electrons
Q.11

What can a semiconductor sense?

  • magnetism
  • temperature
  • pressure
  • all of the above
Q.12

Ionization within a P-N junction causes a layer on each side of the barrier called the:

  • junction
  • depletion region
  • barrier voltage
  • forward voltage
Q.13

The first transistor was invented in 1938.

  • True
  • False
Q.14

The n-type semiconductor material is doped by adding material with electron holes.

  • True
  • False
Q.15

Reverse bias is a condition that essentially ___________ current through the diode.

  • allows
  • prevents
  • increases
  • blocks
Q.16

The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.

  • True
  • False
Q.17

Minority carriers are many times activated by:

  • heat
  • pressure
  • dopants
  • forward bias
Q.18

A P-N junction mimics a closed switch when it:

  • has a low junction resistance
  • is reverse biased
  • cannot overcome its barrier voltage
  • has a wide depletion region
Q.19

Elements with 1, 2, or 3 valence electrons usually make excellent:

  • conductors
  • semiconductors
  • insulators
  • neutral
Q.20

When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?

  • energy gap
  • hole
  • electron-hole pair
  • recombination
0 h : 0 m : 1 s