Q.1
With an increase in temperature, the electrical conductivity of intrinsic semiconductor
  • remains unchanged
  • increases
  • decrease
  • first (b) then (c)
Q.2
In a p-n junction diode not connected to any circuit
  • The potential is the same everywhere
  • The p-type side is ay a higher potential than the n-type side
  • There is an electric field at the junction directed from the n-type side to the p-type side
  • There is an electric field at the junction directed from the p-type side to the n-type side
Q.3
In a common base amplifier, the phase difference between the input signal voltage and the output voltage is
  • $\frac {\pi}{4}$
  • $\pi$
  • 0
  • $\frac {\pi}{2}$
Q.4
In the circuit below, A and B represent the two input, and C represents the output. The circuit represents
jee-semiconductor-mcq-1.png
  • NOT gate
  • NAND gate
  • OR Gate
  • XOR Gate
Q.5
We have a circuit of four NAND gates as shown below Match the column
jee-semiconductor-mcq-2.png
jee-semiconductor-mcq-3.png
  • p -> i, q -> ii ,r->ii, s -> i
  • p -> i, q -> ii ,r->ii, s -> i
  • p -> i, q -> ii ,r->i, s -> i
  • p -> ii, q -> ii ,r->ii, s -> i
Q.6
A semiconductor has an electron concentration of $8 \times 10^{13}$ per cm3 and a hole concentration of $5 \times 10^{12}$ per cm3 . The electron mobility is 25000 cm2 V-1 s-1 and the hole mobility is 100 cm2 V-1 s-Then,
  • the semiconductor is n-type
  • the conductivity is 320 m mho cm-1
  • Both (a) and (b)
  • None of the above
Q.7
In the given circuit, the voltage across the load is maintained at 12 V. The current in the Zener diode varies from 0.50 mA. What is the maximum wattage of the diode?
jee-semiconductor-mcq-4.png
  • 12W
  • 6 W
  • .6 W
  • 1,2 W
Q.8
In the middle of the depletion layer of the reverse-biased p-n junction, the
  • The electric field is zero
  • Potential is maximum
  • The electric field is maximum
  • Potential is zero
Q.9
If the ratio of the concentration of the electrons to that of holes in a semiconductor is 7/5 and the ratio of the currents is 7/4, then the ratio of the drift velocities will be
  • 5/8
  • 5/4
  • 4/5
  • 4/7
Q.10
The Boolean expression $P  + \bar{P} Q$ , where P and Q are the inputs of the logic circuit, represents
  • AND gate
  • NAND gate
  • NOT gate
  • OR gate
Q.11
You are required to choose the correct one out of the given four responses and mark it as (a) If both assertion and reason are true and reason is the correct explanation of the assertion. (b) If both assertion and reason are true but reason is not correct explanation of the assertion. (c) If assertion is true, but reason is false. (d) If both assertion and reason are false.  (e) If reason is true but assertion is false. Assertion: A diode lasers are used as optical sources in optical communication. Reason: Diode lasers consume less energy  
  • a
  • b
  • c
  • d
  • e
Q.12
You are required to choose the correct one out of the given four responses and mark it as (a) If both assertion and reason are true and reason is the correct explanation of the assertion. (b) If both assertion and reason are true but reason is not correct explanation of the assertion. (c) If assertion is true, but reason is false. (d) If both assertion and reason are false.  (e) If reason is true but assertion is false.   Assertion: The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature. Reason: It is due to the law of mass action
  • a
  • b
  • c
  • d
  • e
Q.13
You are required to choose the correct one out of the given four responses and mark it as (a) If both assertion and reason are true and reason is the correct explanation of the assertion. (b) If both assertion and reason are true but reason is not correct explanation of the assertion. (c) If assertion is true, but reason is false. (d) If both assertion and reason are false.  (e) If reason is true but assertion is false Assertion: Conductivity of the semiconductor increases with doping Reason: Doping raises the temperature of the Semi-conductor
  • a
  • b
  • c
  • d
  • e
Q.14
You are required to choose the correct one out of the given four responses and mark it as (a) If both assertion and reason are true and reason is the correct explanation of the assertion. (b) If both assertion and reason are true but reason is not correct explanation of the assertion. (c) If assertion is true, but reason is false. (d) If both assertion and reason are false. (e) If reason is true but assertion is false. Assertion: In a transistor, the base is made thin. Reason: A thin base makes the transistor stable
  • a
  • b
  • c
  • d
  • e
Q.15
Which one of the diode is reverse biased
jee-semiconductor-mcq-5.png
  • A
  • B
  • C
  • D
Q.16
Which of the following current must be zero in an unbiased PN junction diode?
  • Current due to majority charge carriers (both electrons and holes).
  • Current due to minority charge carriers (both electrons and holes)
  • Current due to majority and minority charge carriers.
  • Current due to majority and minority charge carriers (only holes).
Q.17
The current  gain of a transistor  in common base arrangement is .The load resistance of the output circuit is $400 k \ohm$ and input resistance is $200 \ohm$, then
  • Voltage gain=1900, Power gain=1850
  • Voltage gain=1805, Power gain=1900
  • Voltage gain=1800, Power gain=1805
  • Voltage gain=1900, Power gain=1805
Q.18
A 220 V A.C. supply is connected between points A and B. What will be the potential difference V across the capacitor?
jee-semiconductor-mcq-6.png
  • 220V
  • 110V
  • 0V
  • $220 \sqrt 2$ V
Q.19

jee-semiconductor-mcq-7.png
  • NOR
  • OR
  • AND
  • XOR
Q.20
The breakdown in a reverse-biased p–n junction diode is more likely to occur due to (i) large velocity of the minority charge carriers if the doping concentration is small. (ii) large velocity of the minority charge carriers if the doping concentration is large. (iii) strong electric field in a depletion region if the doping concentration is small. (iv) strong electric field in the depletion region if the doping concentration is large. Which of the below represent the correct options
  • (i) and (ii)
  • (i) and (iv)
  • (iii) and (iv)
  • (i) and (iii)
0 h : 0 m : 1 s