Q.1
The width of depletion region is dependent on ___________ of semiconductor.
  • a) Doping concentrations for applied reverse bias
  • b) Doping concentrations for applied forward bias
  • c) Properties of material
  • d) Amount of current provided
Q.2
Electron-hole pairs are generated in ___________
  • a) Depletion region
  • b) Diffusion region
  • c) Depletion region
  • d) P-type region
Q.3
The diffusion process is _____________ as compared with drift.
  • a) Very fast
  • b) Very slow
  • c) Negligible
  • d) Better
Q.4
Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30μm and electron drift velocity ofms-1.
  • a) 1×10-10 Seconds
  • b) 2×10-10 Seconds
  • c) 3×10-10 Seconds
  • d) 4×10-10 Seconds
Q.5
Determine intrinsic region width for a photodiode having drift time of 4×10-s and electron velocity of 2×10-10ms-1.
  • a) 3×10-5M
  • b) 8×10-5M
  • c) 5×10-5M
  • d) 7×10-5M
Q.6
Determine velocity of electron if drift time is 2×10-and intrinsic region width of 25×10-6μm.
  • a) 12.5×104
  • b) 11.5×104
  • c) 14.5×104
  • d) 13.5×104
Q.7
Compute junction capacitance for a p-i-n photodiode if it has area of 0.69×10-6mpermittivity of 10.5×10-13Fcm-1 and width of 30μm.
  • a) 3.043×10-5
  • b) 2.415×10-7
  • c) 4.641×10-4
  • d) 3.708×10-5
Q.8
Determine the area where permittivity of material is 15.5×10-15Fcm-1 and width of 25×10-6 and junction capacitance is 5pF.
  • a) 8.0645×10-5
  • b) 5.456×10-6
  • c) 3.0405×10-2
  • d) 8.0645×10-3
Q.9
Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4pF and material permittivity of 16.5×10-13Fcm-1 and area of 0.55×10-6m2.
  • a) 7.45×10-6
  • b) 2.26×10-7
  • c) 4.64×10-7
  • d) 5.65×10-6
Q.10
Determine permittivity of p-i-n photodiode with junction capacitance of 5pF, area of 0.62×10-6m2 and intrinsic region width ofμm.
  • a) 7.55×10-12
  • b) 2.25×10-10
  • c) 5×10-9
  • d) 8.5×10-12
Q.11
Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98×108Hz.
  • a) 5.05×10-6sec
  • b) 5.05×10-7Sec
  • c) 5.05×10-7sec
  • d) 5.05×10-8Sec
Q.12
Compute maximum 3 dB bandwidth of p-i-n photodiode if it has a max response time of 5.8 ns.
  • a) 0.12 GHz
  • b) 0.14 GHz
  • c) 0.17 GHz
  • d) 0.13 GHz
Q.13
Determine maximum response time for a p-i-n photodiode having width of 28×10-and carrier velocity of 4×104ms-1.
  • a) 105.67 MHz
  • b) 180.43 MHz
  • c) 227.47 MHz
  • d) 250.65 MHz
Q.14
Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9×108Hz and depletion region width of 24μm.
  • a) 93.43×10-5
  • b) 29.55×10-3
  • c) 41.56×10-3
  • d) 65.3×10-4
Q.15
Compute depletion region width of a p-i-n photodiode with 3dB bandwidth of 1.91×108and carrier velocity of 2×104ms-s.
  • a) 1.66×10-5
  • b) 3.2×10-3
  • c) 2×10-5
  • d) 2.34×104
0 h : 0 m : 1 s