Q.1
The width of depletion region is dependent on ___________ of semiconductor.
  • a) Doping concentrations for applied reverse bias
  • b) Doping concentrations for applied forward bias
  • c) Properties of material
  • d) Amount of current provided
Q.2
Electron-hole pairs are generated in ___________
  • a) Depletion region
  • b) Diffusion region
  • c) Depletion region
  • d) P-type region
Q.3
The diffusion process is _____________ as compared with drift.
  • a) Very fast
  • b) Very slow
  • c) Negligible
  • d) Better
Q.4
Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9×108Hz and depletion region width of 24μm.
  • a) 93.43×10⁻⁵
  • b) 29.55×10⁻³
  • c) 41.56×10⁻³
  • d) 65.3×10⁻⁴
Q.5
Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4pF and material permittivity of 16.5×10⁻¹³Fcm-1 and area of 0.55×10⁻⁶m2.
  • a) 7.45×10⁻⁶
  • b) 2.26×10⁻⁷
  • c) 4.64×10⁻⁷
  • d) 5.65×10⁻⁶
Q.6
Determine permittivity of p-i-n photodiode with junction capacitance of 5pF, area of 0.62×10⁻⁶m2 and intrinsic region width ofμm.
  • a) 7.55×10⁻¹²
  • b) 2.25×10⁻¹⁰
  • c) 5×10⁻⁹
  • d) 8.5×10⁻¹²
Q.7
Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30μm and electron drift velocity ofms-1.
  • a) 1×10⁻¹⁰ Seconds
  • b) 2×10⁻¹⁰ Seconds
  • c) 3×10⁻¹⁰ Seconds
  • d) 4×10⁻¹⁰ Seconds
Q.8
Determine intrinsic region width for a photodiode having drift time of 4×10-s and electron velocity of 2×10⁻¹⁰ms-1.
  • a) 3×10⁻⁵M
  • b) 8×10⁻⁵M
  • c) 5×10⁻⁵M
  • d) 7×10⁻⁵M
Q.9
Determine velocity of electron if drift time is 2×10-and intrinsic region width of 25×10⁻⁶μm.
  • a) 12.5×104
  • b) 11.5×104
  • c) 14.5×104
  • d) 13.5×104
Q.10
Compute junction capacitance for a p-i-n photodiode if it has area of 0.69×10⁻⁶mpermittivity of 10.5×10⁻¹³Fcm-1 and width of 30μm.
  • a) 3.043×10⁻⁵
  • b) 2.415×10⁻⁷
  • c) 4.641×10⁻⁴
  • d) 3.708×10⁻⁵
Q.11
Determine the area where permittivity of material is 15.5×10⁻¹⁵Fcm-1 and width of 25×10⁻⁶ and junction capacitance is 5pF.
  • a) 8.0645×10⁻⁵
  • b) 5.456×10⁻⁶
  • c) 3.0405×10⁻²
  • d) 8.0645×10⁻³
Q.12
Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98×108Hz.
  • a) 5.05×10⁻⁶sec
  • b) 5.05×10⁻⁷Sec
  • c) 5.05×10⁻⁷sec
  • d) 5.05×10⁻⁸Sec
Q.13
Compute maximum 3 dB bandwidth of p-i-n photodiode if it has a max response time of 5.8 ns.
  • a) 0.12 GHz
  • b) 0.14 GHz
  • c) 0.17 GHz
  • d) 0.13 GHz
Q.14
Determine maximum response time for a p-i-n photodiode having width of 28×10-and carrier velocity of 4×104ms-1.
  • a) 105.67 MHz
  • b) 180.43 MHz
  • c) 227.47 MHz
  • d) 250.65 MHz
Q.15
Compute depletion region width of a p-i-n photodiode with 3dB bandwidth of 1.91×108and carrier velocity of 2×104ms-s.
  • d) 2.34×104
  • a) 1.66×10⁻⁵
  • b) 3.2×10⁻³
  • c) 2×10⁻⁵
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