Q.1
MOS transistors consist of which of the following?
  • a) semiconductor layer
  • b) metal layer
  • c) layer of silicon-di-oxide
  • d) all of the mentioned
Q.2
In MOS transistors _______________ is used for their gate.
  • a) metal
  • b) silicon-di-oxide
  • c) polysilicon
  • d) gallium
Q.3
The gate region consists of ____________
  • a) insulating layer
  • b) conducting layer
  • c) lower metal layer
  • d) p type layer
Q.4
Electrical charge flows from ____________
  • a) source to drain
  • b) drain to source
  • c) source to ground
  • d) source to gate
Q.5
Source in MOS transistors is doped with ______ material.
  • a) n-type
  • b) p-type
  • c) n & p type
  • d) none of the mentioned
Q.6
In N channel MOSFET which is the more negative of the elements?
  • a) source
  • b) gate
  • c) drain
  • d) source and drain
Q.7
If the gate is given sufficiently large charge, electrons will be attracted to ____________
  • a) drain region
  • b) channel region
  • c) switch region
  • d) bulk region
Q.8
Enhancement mode device acts as ____ switch, depletion mode acts as _____ switch.
  • a) open, closed
  • b) closed, open
  • c) open, open
  • d) close, close
Q.9
Depletion mode MOSFETs are more commonly used as ____________
  • a) switches
  • b) resistors
  • c) buffers
  • d) capacitors
Q.10
Enhancement mode MOSFETs are more commonly used as ____________
  • a) switches
  • b) resistors
  • c) buffers
  • d) capacitors
Q.11
Depletion mode transistor should be large.
  • a) true
  • b) false
Q.12
Which expression is true?
  • a) charging time < discharging time
  • b) charging time > discharging time
  • c) charging time = discharging time
  • d) charging time and discharging time are not related
Q.13
Overheating in device occurs due to less number of resistors per unit area.
  • a) true
  • b) false
Q.14
In n channel MOSFET ______________ is constant.
  • a) channel length
  • b) channel width
  • c) channel depth
  • d) channel concentration
0 h : 0 m : 1 s